On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Author:

Hassan J.,Bergman J.P.,Henry A.,Janzén E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 62 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth;Journal of Crystal Growth;2023-09

2. Study on Uniformity of Epitaxial Graphene on 6-inch 4H-SiC Substrate;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

3. Effect of temperature on growth of epitaxial layer on semi-insulating 4H-SiC substrate;Journal of Crystal Growth;2023-02

4. Effect of Substrate Surfaces for Crystal Growth of a Photochromic Diarylethene by Sublimation;Crystal Growth & Design;2022-08-22

5. Early stage nucleation mechanism for SiC(0001) surface epitaxial growth;Journal of Vacuum Science & Technology A;2022-05

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