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High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching

  • Published:2017-05 Issue: Volume:195 Page:82-85
  • ISSN:0167-577X
  • Container-title:Materials Letters
  • language:en
  • Short-container-title:Materials Letters

Author:

Zhang Fusheng,Chen Xiufang,Yu Cancan,Xu Xiangang,Hu Xiaobo,Qin Xiao,Li Qi,Zhao Xian,Yu Peng,Wang Ruiqi

Funder

National Key Research and Development Program

National Natural Science Foundation of China

Technology Project of State Grid Corporation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on Uniformity of Epitaxial Graphene on 6-inch 4H-SiC Substrate;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

2. Research progress of large size SiC single crystal materials and devices;Light: Science & Applications;2023-01-24

3. The Effect of Cu2+ Ions and Glycine Complex on Chemical Mechanical Polishing (CMP) Performance of SiC Substrates;Tribology Letters;2021-06-22

4. Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications;ACS Applied Nano Materials;2021-05-10

5. Contactless millimeter wave method for quality assessment of large area graphene;2D Materials;2019-05-17
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