Graphene formation on step-free 4H-SiC(0001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3644933
Reference35 articles.
1. LEED and Auger electron observations of the SiC(0001) surface
2. Top-gated graphene field-effect-transistors formed by decomposition of SiC
3. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
4. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene
5. Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}
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1. Study on Uniformity of Epitaxial Graphene on 6-inch 4H-SiC Substrate;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07
2. Features and Prospects for Epitaxial Graphene on SiC;Handbook of Graphene;2019-06-17
3. Scalable graphene production from ethanol decomposition by microwave argon plasma torch;Plasma Physics and Controlled Fusion;2017-10-19
4. Sequential control of step-bunching during graphene growth on SiC (0001);Applied Physics Letters;2016-08-22
5. Direct microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene;Carbon;2016-03
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