Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST)
2. National Institute of Advanced Industrial Science and Technology
3. Nihon University
4. Saitama University
Abstract
We have proposed a novel model of hydrogen etching of SiC based on thermal
equilibrium and have confirmed the validity of our model through the analysis of H2 etching
experiments. The experimental results obtained showed that the etching rate is expressed by a linear
equation with the H2 flow rate, by an exponential function with the reciprocal of the temperature
and by a power law with the pressure. These results agree well with the theoretical behaviors
derived from our model.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
7 articles.
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