Research Progress on Performance Optimization of Ga2O3 SBD
Author:
Affiliation:
1. Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University,Shanghai,China,200433
Funder
Science and Technology Innovation Plan of Shanghai Science and Technology Commission
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399728.pdf?arnumber=10399728
Reference22 articles.
1. Materials issues and devices of α- and β-Ga2O3
2. Diffusion of dopants and impurities in β-Ga2O3
3. How Much Will Gallium Oxide Power Electronics Cost?
4. A Review of gallium oxide-based Power Schottky barrier diodes
5. Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method
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