Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method

Author:

Zhang ZeyulinORCID,Yan PengruORCID,Song Qingwen,Chen Haifeng,Zhang Wentao,Yuan Hao,Du FengyuORCID,Liu Dinghe,Chen DazhengORCID,Zhang Yuming

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference112 articles.

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3. Progression of group-III sesquioxides: epitaxy, solubility and desorption;Hassa;J. Phys. D Appl. Phys.,2021

4. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

5. Epitaxial growth and solar-blind photoelectric characteristic of Ga2O3 film on various oriented sapphire substrates by plasma-enhanced chemical vapor deposition;Hu;Physic. Status Solidi A,2021

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1. Research Progress on Performance Optimization of Ga2O3 SBD;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

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