Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method-Reference-Cited by-同舟云学术

Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method

Published:2023-02 Issue: Volume: Page:
ISSN:2667-3258
Container-title:Fundamental Research
language:en
Short-container-title:Fundamental Research

Author:

Zhang Zeyulin^ORCID,Yan Pengru^ORCID,Song Qingwen,Chen Haifeng,Zhang Wentao,Yuan Hao,Du Fengyu^ORCID,Liu Dinghe,Chen Dazheng^ORCID,Zhang Yuming

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference112 articles.

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4. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

5. Epitaxial growth and solar-blind photoelectric characteristic of Ga2O3 film on various oriented sapphire substrates by plasma-enhanced chemical vapor deposition;Hu;Physic. Status Solidi A,2021

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