Diffusion of dopants and impurities in β-Ga2O3-Reference-Cited by-同舟云学术

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Diffusion of dopants and impurities in β-Ga2O3

Published:2021-12 Issue:6 Volume:39 Page:060801
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Sharma Ribhu¹^ORCID,Law Mark E.¹,Ren Fan²^ORCID,Polyakov Alexander Y.³,Pearton Stephen J.⁴^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611

2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

3. National University of Science and Technology MISiS, 4 Leninsky Ave, Moscow, 119049, Russia

4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

Funder

Defense Threat Reduction Agency

National Science Foundation

Russian Science Foundation

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/am-pdf/10.1116/6.0001307

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1. First‐Principles Study on the Effects of Different Valence H_i and V_O on the Mobility, Conductivity, and Carrier Lifetime of β‐Ga₂O₃: Mo^5+/6+;physica status solidi (b);2024-07-28

2. High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes;Journal of Vacuum Science & Technology A;2024-07-01

3. Study on the effects of VO and Hi on the absorption spectrum and conductivity of Ti doped β-Ga2O3;Materials Today Communications;2024-06

4. Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga2O3 by oxygen annealing achieving remarkable current blocking;Applied Physics Letters;2024-05-20

5. Enhanced electrical conductivity and reduced work function of β-Ga2O3 thin films by hydrogen plasma treatment;Journal of Alloys and Compounds;2024-02

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