NUMERICAL INVESTIGATION ON THE TEMPERATURE DEPENDENCE OF THE CYLINDRICAL-GATE-ALL-AROUND Si-NW-FET

Abstract

We report the results of our numerical investigation on the temperature dependence of the characteristics of the cylindrical gate-all-around Si nanowire field effect transistor ( Si -NW-FET). Assuming the effect of temperature on the energy band structure of Si just like the effect of strain, we simulate the transistor characteristics at various temperatures (50 K ≤ T ≤ 300 K ). In this investigation, we demonstrate the temperature dependence of the transistor sub-threshold swing and the threshold voltage are both linear functions of the temperature, represented by 61.5 × (T/300) + 63.4 (mV/decade) and 220–140 × (T/300-1) (mV). By calculating the IDS - T characteristics for VDS = 0.4 V and various VGS, we show that the temperature sensitivity of the drain current defined as the slope of the IDS - T plot, for a given VGS, is independent of the temperature and increases with VGS in a quadratic manner [- 150 × (VGS - 0.50)2 + 8.5 (nA/K)]. Ultimately, the dependence of the transistor delay time on temperature will be presented.