Temperature dependent properties of InSb and InAs nanowire field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3402760
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1. High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
2. Vertical wrap-gated nanowire transistors
3. Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
4. Electron transport in InAs nanowires and heterostructure nanowire devices
5. Long-Lived Photoinduced Charge Separation in Ru(Bpy)32+/Viologen System at Nafion Membrane−Solution Interface
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