Impact ionization in low-band-gap semiconductors driven by ultrafast terahertz excitation: Beyond the ballistic regime
Author:
Funder
Horizon 2020
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.106.235201/fulltext
Reference40 articles.
1. Cutting-edge terahertz technology
2. Filling the THz gap—high power sources and applications
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4. Effective Mass Anisotropy of Hot Electrons in Nonparabolic Conduction Bands ofn-Doped InGaAs Films Using Ultrafast Terahertz Pump-Probe Techniques
5. Terahertz-induced interband tunneling of electrons in GaAs
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4. THz-induced carrier multiplication in TaAs Weyl semimetal;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17
5. Interplay between intervalley scattering and impact ionization induced by intense terahertz pulse in InSb thin films;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17
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