Surface band bending caused by native oxides on solution-processed twinned InSb nanowires with p-type conductivity-Reference-Cited by-同舟云学术

Surface band bending caused by native oxides on solution-processed twinned InSb nanowires with p-type conductivity

Published:2023 Issue:45 Volume:15 Page:18473-18480
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Xu Rui¹,Xu Kaijia¹,Sun Yingzhi¹,Wen Yan¹,Cheng Lanjun²,Shen Feng-cui¹,Qian Yinyin¹^ORCID

Affiliation:

1. Anhui Laboratory of Clean Energy Materials and Chemistry for Sustainable Conversion of Natural Resources, College of Chemical and Environmental Engineering, Anhui Polytechnic University, Wuhu, Anhui, 241000, P. R. China

2. School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, 230009, P. R. China

Abstract

The single NWFET devices were firstly fabricated from solution-grown twinned InSb NWs and exhibited n–p switching behavior.

Funder

Anhui Polytechnic University

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR03924B

Reference56 articles.

1. Parity-preserving and magnetic field–resilient superconductivity in InSb nanowires with Sn shells

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4. GaAs/GaP superlattice nanowires: growth, vibrational and optical properties

5. InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection

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