CMOS compatible SOI nanowire FET with charged dielectric for temperature sensing applications
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/ab57df/pdf
Reference18 articles.
1. CMOS Compatible Electrostatically Formed Nanowire Transistor for Efficient Sensing of Temperature
2. Depletion-All-Around Operation of the SOI Four-Gate Transistor
3. Evidence for reduction of noise and radiation effects in G/sup 4/-FET depletion-all-around operation
4. Temperature Sensitivity of SOI-CMOS Transistors for Use in Uncooled Thermal Sensing
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2. Design and modeling of the electrostatically controlled nanowire FET for ppt-level hydrogen sensing;Journal of Physics D: Applied Physics;2023-10-12
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