Evidence for reduction of noise and radiation effects in G/sup 4/-FET depletion-all-around operation-Reference-Cited by-同舟云学术

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Evidence for reduction of noise and radiation effects in G/sup 4/-FET depletion-all-around operation

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Container-title:Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.
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Author:

Akarvardar K.,Cristoloveanu S.,Dufrene B.,Gentil P.,Schrimpf R.D.,Blalock B.J.,Chroboczek J.A.,Mojarradi M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10379/32983/01546592.pdf?arnumber=1546592

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CMOS compatible SOI nanowire FET with charged dielectric for temperature sensing applications;Journal of Physics D: Applied Physics;2019-12-03

2. Efficient Temperature Sensor Based on SOI Gate-All-Around Electrostatically Formed Nanowire Transistor;IEEE Transactions on Electron Devices;2019-08

3. CMOS Compatible Electrostatically Formed Nanowire Transistor for Efficient Sensing of Temperature;IEEE Transactions on Electron Devices;2017-09

4. Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors;IEEE Transactions on Electron Devices;2012-02

5. Effect of gate bias on channel in depletion-all-around operation of the SOI four-gate transistor;2008 International Conference on Electrical and Computer Engineering;2008

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