CMOS Compatible Electrostatically Formed Nanowire Transistor for Efficient Sensing of Temperature-Reference-Cited by-同舟云学术

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CMOS Compatible Electrostatically Formed Nanowire Transistor for Efficient Sensing of Temperature

Published:2017-09 Issue:9 Volume:64 Page:3836-3840
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shimanovich Klimentiy^ORCID,Coen Tom,Vaknin Yonatan,Henning Alex,Hayon Joseph,Roizin Yakov,Rosenwaks Yossi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8011577/08000690.pdf?arnumber=8000690

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrasensitive hydrogen detection by electrostatically formed silicon nanowire decorated by palladium nanoparticles;Sensors and Actuators B: Chemical;2021-11

2. High-Temperature Sensitivity of a Depletion-Mode AlGaN/GaN MIS-HEMT;IEEE Transactions on Electron Devices;2021-11

3. Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications;Advanced Materials Technologies;2021-04-23

4. Effective uncooled infrared bolometer based on SOI gate all around electrostatically formed nanowire transistors;Engineering Research Express;2020-07-13

5. CMOS compatible SOI nanowire FET with charged dielectric for temperature sensing applications;Journal of Physics D: Applied Physics;2019-12-03

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