PERFORMANCE EVALUATION OF SOURCE HETEROJUNCTION STRAINED CHANNEL GATE ALL AROUND NANOWIRE TRANSISTOR

Abstract

A Gate All Around Nanowire Transistor (GAA NWT) which employs source heterojunction and strained channel is proposed which improves device characteristics. A quantum mechanical transport approach based on nonequilibrium Green's function (NEGF) method in the frame work of effective mass theory is employed in this analysis. We evaluate the variation of the threshold voltage, the subthreshold slope, ON and OFF state currents when channel length decreases. It is shown that the source heterojunction strained channel GAA NWT gives high performance transistors values of the scaled transconductance and ON current that are greater than conventional silicon GAA NWT. Furthermore, comparison of switching delay τd and unity current gain frequency fT of the devices shows that the performance of source heterojunction strained channel GAA NWT is better than the conventional silicon GAA NWT.