Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study-Reference-Cited by-同舟云学术

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Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

Published:2009-03 Issue:2 Volume:8 Page:159-166
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Martinez A.,Kalna K.,Sushko P.V.,Shluger A.L.,Barker J.R.,Asenov A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/4799383/04445005.pdf?arnumber=4445005

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