High Resolution Scanning Transmission Electron Microscopy (S/TEM) Investigation Of Common Defects In Scandium and Aluminum Alloyed β-Ga2O3-Reference-Cited by-同舟云学术

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High Resolution Scanning Transmission Electron Microscopy (S/TEM) Investigation Of Common Defects In Scandium and Aluminum Alloyed β-Ga2O3

Published:2023-07-22 Issue:Supplement_1 Volume:29 Page:1779-1780
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:

Author:

Balog Andrew R¹,Miao Leixin¹,Bachu Saiphaneendra¹,Jesenovec Jani²³,Dutton Benjamin²³,McCloy John²³,Alem Nasim¹⁴

Affiliation:

1. Department of Materials Science and Engineering, The Pennsylvania State University , State College, PA , United States

2. Materials Science and Engineering Program, Washington State University , Pullman, WA , United States

3. Institute of Materials Research, Washington State University , Pullman, WA , United States

4. Materials Research Institute, The Pennsylvania State University , State College, PA , United States

Publisher

Oxford University Press (OUP)

Subject

Instrumentation

Link

https://academic.oup.com/mam/article-pdf/29/Supplement_1/1779/50934594/ozad067.921.pdf

Reference11 articles.

1. A review of Ga2O3materials, processing, and devices

2. β-Ga2O3 for wide-bandgap electronics and optoelectronics

3. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

4. Self-trapped holes and polaronic acceptors in ultrawide-bandgap oxides

5. Anisotropic thermal conductivity in single crystal β-gallium oxide

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding Dislocation and Deformation Structure In Monoclinic Ultrawide Bandgap Semiconductor β-Ga2O3 Under High-Stress;Microscopy and Microanalysis;2024-07

2. Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3;APL Materials;2024-01-01

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