Understanding Dislocation and Deformation Structure In Monoclinic Ultrawide Bandgap Semiconductor β-Ga2O3 Under High-Stress-Reference-Cited by-同舟云学术

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Understanding Dislocation and Deformation Structure In Monoclinic Ultrawide Bandgap Semiconductor β-Ga2O3 Under High-Stress

Published:2024-07 Issue:Supplement_1 Volume:30 Page:
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:

Author:

Balog Andrew R¹,Bisht Anuj¹,Jesenovec Jani²³,Dutton Benjamin²³,McCloy John²³,Alem Nasim¹

Affiliation:

1. Department of Materials Science and Engineering, The Pennsylvania State University , State College, PA , USA

2. Materials Science and Engineering Program, Washington State University , Pullman, WA , USA

3. Institute of Materials Research, Washington State University , Pullman, WA , USA

Publisher

Oxford University Press (OUP)

Link

https://academic.oup.com/mam/article-pdf/30/Supplement_1/ozae044.069/58670817/ozae044.069.pdf

Reference11 articles.

1. A review of Ga2O3materials, processing, and devices

2. β-Ga2O3 for wide-bandgap electronics and optoelectronics

3. High Resolution Scanning Transmission Electron Microscopy (S/TEM) Investigation Of Common Defects In Scandium and Aluminum Alloyed β-Ga2O3

4. Al Coordination and Ga Interstitial Stability in a β-(Al_0.2Ga_0.8)₂O₃ Thin Film

5. Spatially Resolved Investigation of the Bandgap Variation across a β-(Al_xGa_1–x)₂O₃/β-Ga₂O₃ Interface by STEM–VEELS

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