Spatially Resolved Investigation of the Bandgap Variation across a β-(Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Interface by STEM–VEELS-Reference-Cited by-同舟云学术

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Spatially Resolved Investigation of the Bandgap Variation across a β-(Al_xGa_1–x)₂O₃/β-Ga₂O₃ Interface by STEM–VEELS

Published:2022-01-24 Issue:2 Volume:4 Page:585-591
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chmielewski Adrian¹^ORCID,Deng Ziling²,Moradifar Parivash¹,Miao Leixin¹,Zhang Yuewei³,Mauze Akhil³,Lopez Kleyser A.¹,Windl Wolfgang²,Alem Nasim¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park 16802, United States

2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States

3. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, United States

Funder

Air Force Office of Scientific Research

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00824

Reference63 articles.

1. Recent progress in Ga2O3power devices

2. A review of Ga2O3materials, processing, and devices

3. An ${({\rm Al}_{\rm x}{\rm Ga}_{1-{\rm x}})}_{2}{\rm O}_{3}$ Metal-Semiconductor-Metal VUV Photodetector

4. Ultra-Robust Deep-UV Photovoltaic Detector Based on Graphene/(AlGa)2O3/GaN with High-Performance in Temperature Fluctuations

5. Preparation of High Al Content (AlxGa1−x)2O3 Films by Low-Pressure Reactive Vapor Deposition on Sapphire Substrates

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3. Al Coordination and Ga Interstitial Stability in a β-(Al_0.2Ga_0.8)₂O₃ Thin Film;ACS Applied Materials & Interfaces;2023-02-01

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