Ultra-Robust Deep-UV Photovoltaic Detector Based on Graphene/(AlGa)2O3/GaN with High-Performance in Temperature Fluctuations
Author:
Affiliation:
1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b18352
Reference32 articles.
1. Vacuum-Ultraviolet Photovoltaic Detector
2. Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction
3. Vacuum-Ultraviolet Photovoltaic Detector with Improved Response Speed and Responsivity via Heating Annihilation Trap State Mechanism
4. Gallium oxide solar-blind ultraviolet photodetectors: a review
5. Semiconductor ultraviolet detectors
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