Self-trapped holes and polaronic acceptors in ultrawide-bandgap oxides
Author:
Affiliation:
1. Center for Computational Materials Science, United States Naval Research Laboratory, Washington DC 20375, USA
Funder
ONR/NRL 6.1 Basic Research Program
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0077030
Reference65 articles.
1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
2. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
3. Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices
4. Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes
5. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3
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