All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=9/a=091101/pdf
Reference23 articles.
1. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
2. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing
3. Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer
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