Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy-Reference-Cited by-同舟云学术

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Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy

Published:2016-12-08 Issue: Volume: Page:
ISSN:2050-5698
Container-title:Microscopy
language:en
Short-container-title:Microscopy (Tokyo)

Author:

Matsuhata Hirofumi,Sugiyama Naoyuki,Chen Bin,Yamashita Tamotsu,Hatakeyama Tetsuo,Sekiguchi Takashi

Funder

Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society

Ministry of Economy, Trade and Industry (METI)

New Energy and Industrial Technology Organization (NEDO) in Japan

Publisher

Oxford University Press (OUP)

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Structural Biology

Link

http://academic.oup.com/jmicro/article-pdf/66/2/103/11161587/dfw107.pdf

Reference21 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. Effect of surface morphological defects and crystallographic defects on reliability of thermal oxides on C-face;Suzuki;Mater. Sci. Forum,2012

3. Correlation between surface morphological defects and crystallographic defects in SiC;Hatakeyama;Mater. Sci. Forum,2012

4. Relation between defects on 4H-SiC epitaxial surface and gate oxide reliability;Sameshima;Mater. Sci. Forum,2013

5. Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers;Ishiyama;Jpn. J. Appl. Phys.,2014

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers;CrystEngComm;2022

2. Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m ‐Plane GaN Substrate;physica status solidi (a);2021-06-06

3. Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction;Journal of Applied Physics;2020-10-28

4. Identification of fine structures at the surface of epi-ready GaN wafer observed by confocal differential interference contrast microscopy;Japanese Journal of Applied Physics;2020-10-01

5. Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses;Nanoscale;2020

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