Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers-Reference-Cited by-同舟云学术

Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

Author:

Yu Jinying¹^ORCID,Yu Yi²,Bai Zhiqiang²,Peng Yan¹³,Tang Xiaoyan²,Hu Xiaobo¹³,Xie Xuejian¹³,Xu Xiangang¹³,Chen Xiufang¹³

Affiliation:

1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

2. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an, 710071, China

3. Institute of Novel Semiconductors, Shandong University, Jinan, 250100, China

Abstract

Surface morphologies of triangular defects with TD-I, TD-II and TD-III observed by optical microscopy.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Key Technology Research and Development Program of Shandong

Key Research and Development Projects of Shaanxi Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference36 articles.

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