Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m ‐Plane GaN Substrate-Reference-Cited by-同舟云学术

Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m ‐Plane GaN Substrate

Published:2021-06-06 Issue:14 Volume:218 Page:2100175
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chen Jun¹,Yi Wei²,Ito Shun³,Sekiguchi Takashi¹⁴^ORCID

Affiliation:

1. Research Center for Functional Materials National Institute for Materials Science Tsukuba 305-0047 Japan

2. Department of Materials Chemistry Kyoto University Kyoto 615-8510 Japan

3. Institute for Materials Research Tohoku University Sendai 980-8577 Japan

4. Faculty of Pure and Applied Sciences University of Tsukuba Tsukuba 305-8573 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100175

Reference24 articles.

1. Wide-bandgap semiconductor materials: For their full bloom

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

4. Vertical Power p-n Diodes Based on Bulk GaN

5. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

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