Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction
Author:
Affiliation:
1. College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China
2. China Resources Microelectronics Limited, Wuxi 214061, China
Funder
National Key Research and Development Program of China
Power Electronics Science and Education Development Program of Delta Group
Fundamental Research Funds for the Central Universities
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0020066
Reference53 articles.
1. Power Semiconductor Devices for Smart Grid and Renewable Energy Systems
2. A Survey of Wide Bandgap Power Semiconductor Devices
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4. 100 mm 4HN-SiC Wafers with Zero Micropipe Density
5. Towards a unified view of polytypism in silicon carbide
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