Author:
Choi Chel-Jong,Lee Hoon-Ki,Janardhanam V.,Mun Jae Kyoung,Jang Tae-Hoon,Yun Hyung Joong,Won Jonghan,Shim Kyu-Hwan
Reference43 articles.
1. Implementation of a 900 V switching circuit for high breakdown voltage ?-Ga 2 O 3 Schottky diodes;Y.-T Chen;ECS J. Solid State Sci. Technol,2019
2. Enhancing breakdown voltage of a Ga 2 O 3 Schottky barrier diode with small-angle beveled and high-k oxide field plate;D Liu;ECS J. Solid State Sci. Technol,2021
3. Progress of ultrawide bandgap Ga 2 O 3 semiconductor materials in power MOSFETs;H Zhang;IEEE Trans. Power Electron,2020
4. The investigation of ?-Ga 2 O 3 Schottky diode with floating field ring termination and the interface states;Z Hu;ECS J. Solid State Technol,2020
5. Surge current capability of ultra-wide-bandgap Ga 2 O 3 Schottky diodes;C Buttay;Microelectron. Rel,2020