Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST)
2. R and D Partnership for Future Power Electronics Technology (FUPET)
Abstract
The origins of certain types of micrometer-scale surface morphological defects on SiC epitaxial layers are clarified using X-ray topography. Two types of surface morphological defects are commonly observed on Si- and C-face epitaxial layers. Relatively large pits (around 4μm×2μm) originate from threading screw dislocations (TSDs). Relatively small pits (around 1.5μm×1μm) originate from threading edge dislocations (TEDs). The shapes and depths of these surface morphological pits depend on the fabrication history of the epitaxial wafers.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. J. Senzaki, K. Kojima, T. Kato, A. Shimozato, and K. Fukuda, Appl. Phys. Lett. 89, 022909.
2. T. Hatakeyama, T. Suzuki, J. Senzaki, K. Fukuda, H. Matsuhata, T. Shinohe and K. Arai: Mater. Sci. Forum Vol. 600-603 (2009), p.783.
3. T. Suzuki, H. Yamaguchi, T. Hatakeyama, H. Matsuhata, J. Senzaki, K. Fukuda, T. Shinohe and H. Okumura, to be published.
4. H. Yamaguchi, et al., Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition: Mat. Sci. Forum 600-603 (2009) pp.309-312.
5. Y. N. Picard, K. X. Liu, R. E. Stahlbush, M. E. Twigg, X. Zhang and M. Skowronski, J. Appl. Phys. 103, 074904 (2008).
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献