Relations between Surface Morphology and Dislocations of SiC Crystal-Reference-Cited by-同舟云学术

Relations between Surface Morphology and Dislocations of SiC Crystal

Published:2015-06 Issue: Volume:821-823 Page:311-314
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Orai Yoshihisa¹,Watanabe Syunya¹,Sato Takahiro¹,Isshiki Toshiyuki²,Fukui Munetoshi¹

Affiliation:

1. Hitachi High-Technologies

2. Kyoto Institute of Technology

Abstract

We observed fine surface morphology of silicon carbide wafers using a low energy scanning electron microscope (LESEM). Typical kinds of surface defects were observed by LESEM. After low temperature KOH treatment, it is confirmed that positions of etch pits are the same positions of these defects. Correlation between LESEM imaging and cross-sectional scanning transmission electron microscopy (STEM) of the same defects reveals threading dislocations and basal plane dislocations at the core of the defects.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.311.pdf

Reference5 articles.

1. T. Hatakeyama, K. Fukuda, H. Okamura, Materials Science Forum Vols. 717-720 (2012), pp.359-362.

2. M. Fukui, S. Takeuchi, A. Miyaki, S. Ito, Drip-XIV(2011), p.58.

3. T. Isshiki, Abs. 8th Japanese-Polish Joint seminar, Uji, Japan, 2010, pp.07-04.

4. T. Sato, Y. Suzuki, H. Ito, T. Isshiki and M. Fukui, Materials Science Forum Vols. 778-780.

5. T. Ohnishi et al., US patent 5270552 （1992）.

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