Surface morphology and dislocation characteristics near the surface of 4H-SiC wafer using multi-directional scanning transmission electron microscopy-Reference-Cited by-同舟云学术

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Surface morphology and dislocation characteristics near the surface of 4H-SiC wafer using multi-directional scanning transmission electron microscopy

Published:2017-08-09 Issue:5 Volume:66 Page:337-347
ISSN:0022-0744
Container-title:Journal of Electron Microscopy
language:en
Short-container-title:

Author:

Sato Takahiro,Orai Yoshihisa,Suzuki Yuya,Ito Hiroyuki,Isshiki Toshiyuki,Fukui Munetoshi,Nakamura Kuniyasu,Schamp C.T.

Publisher

Oxford University Press (OUP)

Subject

Instrumentation

Link

http://academic.oup.com/jmicro/article-pdf/66/5/337/20891108/dfx022.pdf

Reference33 articles.

1. SiC power Schottky and PiN diodes;Singh;IEEE Trans. Electron Devices,2002

2. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015

3. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers;Senzaki;Appl. Phys. Lett.,2006

4. Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane;Takahashi;J. Cryst. Growth,1994

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1. AFM Observation of Etch-Pit Shapes on β-Ga₂O₃ (001) Surface Formed by Molten Alkali Etching;Materials Science Forum;2020-07

2. Electron tomography imaging methods with diffraction contrast for materials research;Microscopy;2020-03-02

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