Growth of Si on Si(1 1 1)-7 × 7 at room temperature under laser substrate excitation
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap/2014140126/pdf
Reference31 articles.
1. New Types of Unstable Step-Flow Growth onSi(111)−(7×7)during Molecular Beam Epitaxy: Scaling and Universality
2. Step wandering induced by homoepitaxy on Si() during “1×1”–7×7 phase transition
3. Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7×7)-“1×1” surface phase transition
4. MBE growth of GaN pn-junction photodetector on AlN/Si(111) substrate with Ni/Ag as ohmic contact
5. Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer
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