Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer-Reference-Cited by-同舟云学术

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Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Published:2014-04 Issue: Volume:557 Page:76-79
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sawano K.,Hoshi Y.,Endo S.,Nagashima T.,Arimoto K.,Yamanaka J.,Nakagawa K.,Yamada S.,Hamaya K.,Miyao M.,Shiraki Y.

Funder

MEXT-Supported Program for the Strategic Research Foundation at Private Universities 2009–2013

MEXT, Japan

Industrial Technology Research Grant Program

NEDO

Strategic Information and Communications R&D Promotion Programme (SCOPE)

MIC, Japan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization

2. Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

3. Qualitative study of temperature-dependent spin signals in n-Ge-based lateral devices with Fe3Si/n+-Ge Schottky-tunnel contacts

4. Mechanism of Fermi level pinning at metal/germanium interfaces

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth-controlled area patterning;Applied Physics Express;2022-12-19

2. Strong room-temperature EL emission from Ge-on-Si (1 1 1) diodes;Journal of Crystal Growth;2022-09

3. Critical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111);Applied Physics Express;2019-07-25

4. Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation;Japanese Journal of Applied Physics;2019-03-26

5. (Invited) Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering;ECS Transactions;2016-08-25

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