Author:
Sawano Kentarou,Xu Xuejun,Konoshima Shiori,Shitara Nayuta,Ohno Takeshi,Maruizumi Takuya
Abstract
Various methods to induce tensile and compressive strains into group IV semiconductors have been intensively studied toward high performance and low-power consumption electronic and photonic devices. Among them, here we show our approaches to induce uniaxial strain by local defect introduction and enhanced tensile strain by wafer bonding and microbridge fabrication.
Publisher
The Electrochemical Society
Cited by
3 articles.
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