New Types of Unstable Step-Flow Growth onSi(111)−(7×7)during Molecular Beam Epitaxy: Scaling and Universality
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.95.216101/fulltext
Reference24 articles.
1. Fabrication and Integration of Nanostructures on Si Surfaces
2. Wavelength Selection in Unstable Homoepitaxial Step Flow Growth
3. Kinetic Growth Instabilities on Vicinal Si(001) Surfaces
4. Wafer-scale strain engineering on silicon for fabrication of ultimately controlled nanostructures
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