MBE growth of GaN pn-junction photodetector on AlN/Si(111) substrate with Ni/Ag as ohmic contact
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layer
2. Piezoelectric Photothermal and Photoreflectance Spectra of InxGa1-xN Grown by Radio-Frequency Molecular Beam Epitaxy
3. Low-Temperature Synthesis of Gallium Nitride Thin Films Using Reactive Rf-Magnetron Sputtering
4. GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts
5. Structural Properties of Doped GaN on Si(111) Studied by X-Ray Diffraction Techniques
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