The Theoretical Simulation of PN Junction Based on III-Nitride Compounds

Abstract

This research work describes numerical solutions based on one-dimensional Poisson finite element technique. In order to achieve this, a PN junction based on III-V nitride semiconductors is built to examine the electrostatic potential energy profile and charge concentration at equilibrium condition. In addition, the zero bias voltage is involved on p-type and n-type semiconductors. Using the Newton-Raphson technique, the potential distribution of semiconductor devices are computed and discussed.