Defect-Mediated Transport in Self-Powered, Broadband, and Ultrafast Photoresponse of a MoS2/AlN/Si-Based Photodetector
Author:
Affiliation:
1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India
Funder
Indian National Science Academy
Council of Scientific and Industrial Research
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00007
Reference66 articles.
1. Fast‐Response, Highly Air‐Stable, and Water‐Resistant Organic Photodetectors Based on a Single‐Crystal Pt Complex
2. Amorphous MoS2 Photodetector with Ultra-Broadband Response
3. Photothermal and Joule-Heating-Induced Negative-Photoconductivity-Based Ultraresponsive and Near-Zero-Biased Copper Selenide Photodetectors
4. A vertically layered MoS2/Si heterojunction for an ultrahigh and ultrafast photoresponse photodetector
5. In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN
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