Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO<sub>3</sub>-Reference-Cited by-同舟云学术

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Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO₃

Published:2024-08-17 Issue:34 Volume:16 Page:45091-45099
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Yuyang¹²^ORCID,Wang Lisheng¹³,Wu Weijie²⁴,Wang Zhaoyang¹²³,Sun Fei¹²³,Jiang He¹²³^ORCID,Zhang Bangmin¹²³,Zheng Yue¹²³^ORCID

Affiliation:

1. School of Physics, Sun Yat-sen University, Guangzhou 510275, China

2. Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

3. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

4. School of Systems Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Sun Yat-Sen University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c05868

Reference65 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. Ultra-wide bandgap semiconductor Ga2O3 power diodes

3. Low-dimensional wide-bandgap semiconductors for UV photodetectors

4. Ultrafast, Broadband Photodetector Based on MoSe 2 /Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

5. Multilayered PdSe 2 /Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application

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