Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7×7)-“1×1” surface phase transition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates;Thin Solid Films;2022-12
2. On the role of mobile nanoclusters in 2D island nucleation on Si(111)-(7 × 7) surface;Surface Science;2018-01
3. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth;Journal of Crystal Growth;2017-01
4. Impact of boron on the step-free area formation on Si(111) mesa structures;Journal of Applied Physics;2015-12-28
5. Influence of (7×7)–“1×1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111);Journal of Crystal Growth;2015-09
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