Correlation between optical properties and interface morphology of GaAs∕AlGaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2193039
Reference17 articles.
1. Excitons, phonons, and interfaces in GaAs/AlAs quantum-well structures
2. Does luminescence show semiconductor interfaces to be atomically smooth?
3. 〈110〉 HREM of interfacial structures in semiconductor hetero-structures
4. Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
5. Step bunching and step equalization on vicinal GaAs(001) surfaces
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3. Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy;Physical Review B;2012-10-08
4. Magnetophotoluminescence study of GaAs/AlGaAs coupled double quantum wells with bimodal heterointerface roughness;Journal of Luminescence;2012-05
5. Optics, morphology, and growth kinetics of GaAs/AlxGa1−xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy;Physical Review B;2011-10-17
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