Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD)-Reference-Cited by-同舟云学术

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Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD)

Published:1995-02-15 Issue:Part 2, No. 2B Volume:34 Page:L220-L222
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ikuta Kenji,Shinohara Masanori,Inoue Naohisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum-Well Lasers and Their Applications;Reference Module in Materials Science and Materials Engineering;2016

2. Optics, morphology, and growth kinetics of GaAs/AlxGa1−xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy;Physical Review B;2011-10-17

3. Quantum-Well Lasers and Their Applications;Comprehensive Semiconductor Science and Technology;2011

4. Correlation between optical properties and interface morphology of GaAs∕AlGaAs quantum wells;Applied Physics Letters;2006-04-03

5. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates;Applied Physics Letters;1996-04-15

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