Basics of surface reconstruction during selective area metalorganic chemical vapour-phase epitaxy of GaAs films in the stripe-type ultra-wide window-Reference-Cited by-同舟云学术

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Basics of surface reconstruction during selective area metalorganic chemical vapour-phase epitaxy of GaAs films in the stripe-type ultra-wide window

Published:2022-06 Issue: Volume:588 Page:152991
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Slipchenko Sergey,Shamakhov Viktor,Nikolaev Dmitriy,Fomin Evgenii,Soshnikov Ilya,Bondarev Alexsandr,Mitrofanov Maksim,Pikhtin Nikita,Kop‘ev Peter

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy;Kitamura;Jpn. J. Appl. Phys.,1995

2. Epitaxial growth and optical properties of semiconductor quantum wires;Wang;J. Appl. Phys.,2006

3. Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55 µm;Lelarge;IEEE J. Sel. Top. Quant. Electron.,2007

4. A single-atom transistor;Fuechsle;Nat. Nanotechnol.,2012

5. Theory and experiment of step bunching on misoriented GaAs(001) during metalorganic vapor-phase epitaxy;Chua;Appl. Phys. Lett.,2008

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2. High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss;Bulletin of the Lebedev Physics Institute;2023-09

3. Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition;Nanomaterials;2023-08-22

4. Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of AlzGa1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows;Technologies;2023-07-07

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