Impact of boron on the step-free area formation on Si(111) mesa structures
Author:
Affiliation:
1. Institute of Electronic Materials and Devices, Leibniz University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939160
Reference50 articles.
1. Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness
2. Effects of interface flatness and abruptness on optical and electrical characteristics of GaAs/AlGaAs quantum structures grown by metalorganic vapor phase epitaxy
3. Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures
4. Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si∕SiO2 double-barrier structure
5. Preparation of large step-free mesas on Si(111) by molecular beam epitaxy
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