Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.epjap.org/10.1051/epjap/2010100056/pdf
Reference53 articles.
1. Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP∕InGaAsP
2. High-performance and damage-free plasma etching processes for future ULSI patterning
3. Inductivity coupled plasma etching to fabricate the nonlinear optical polymer photonic crystal waveguides
4. Cl[sub 2]∕O[sub 2]-inductively coupled plasma etching of deep hole-type photonic crystals in InP
5. Fabrication of InP-based two-dimensional photonic crystal membrane
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. (Invited) Challenges for Etch Technology and the Integration of New Channel Materials Beyond 7 nm;ECS Transactions;2017-04-27
2. Modeling of InP Etching Under ICP Cl2 /Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution;Plasma Processes and Polymers;2012-12-21
3. Global Model of $\hbox{Cl}_{2}\hbox{/Ar}$ High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP;IEEE Transactions on Plasma Science;2012-04
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