Quantitative interpretation of the excitonic splittings in aluminum nitride
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap/2010100448/pdf
Reference28 articles.
1. Identification of extremely radiative nature of AlN by time-resolved photoluminescence
2. High-excitation and high-resolution photoluminescence spectra of bulk AlN
3. Band-edge exciton states in AlN single crystals and epitaxial layers
4. Impact of strain on free-exciton resonance energies in wurtzite AlN
5. Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate
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1. Individually resolved luminescence from closely stacked GaN/AlN quantum wells;Photonics Research;2020-04-01
2. A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1−xN multiple quantum wells;Applied Physics Express;2016-12-21
3. Electronic and magnetic properties of vanadium doped AlN nanosheet under in-plane biaxial strains;Superlattices and Microstructures;2014-09
4. Anisotropic absorption and emission of bulk(11¯00)AlN;Physical Review B;2013-06-24
5. Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering;Superlattices and Microstructures;2012-11
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