Identification of extremely radiative nature of AlN by time-resolved photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3284653
Reference27 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
3. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
4. Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers
5. Impact of strain on free-exciton resonance energies in wurtzite AlN
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