Impact of strain on free-exciton resonance energies in wurtzite AlN-Reference-Cited by-同舟云学术

Impact of strain on free-exciton resonance energies in wurtzite AlN

Published:2007-12-15 Issue:12 Volume:102 Page:123707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ikeda Hirokatsu,Okamura Takahiro,Matsukawa Kodai,Sota Takayuki,Sugawara Mariko,Hoshi Takuya,Cantu Pablo,Sharma Rajat,Kaeding John F.,Keller Stacia,Mishra Umesh K.,Kosaka Kei,Asai Keiichiro,Sumiya Shigeaki,Shibata Tomohiko,Tanaka Mitsuhiro,Speck James S.,DenBaars Steven P.,Nakamura Shuji,Koyama Takahiro,Onuma Takeyoshi,Chichibu Shigefusa F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2825577

Reference32 articles.

1. Epitaxially grown AlN and its optical band gap

2. The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process

3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

4. First-principles calculations of effective-mass parameters of AlN and GaN

5. Valence band splittings and band offsets of AlN, GaN, and InN

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