Band-edge exciton states in AlN single crystals and epitaxial layers-Reference-Cited by-同舟云学术

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Band-edge exciton states in AlN single crystals and epitaxial layers

Published:2004 Issue:19 Volume:85 Page:4334
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen L.,Skromme B. J.,Dalmau R. F.,Schlesser R.,Sitar Z.,Chen C.,Sun W.,Yang J.,Khan M. A.,Nakarmi M. L.,Lin J. Y.,Jiang H.-X.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference21 articles.

1. Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition

2. Near band-edge transitions in AlN thin films grown on different substrates

3. Band structure and fundamental optical transitions in wurtzite AlN

4. Near-band-edge photoluminescence of wurtzite-type AlN

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1. Predicting exciton binding energies from ground-state properties;Physical Review B;2024-08-22

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3. Theory of k⃗⋅p⃗ electronic structure and effective masses of ultra-wide bandgap wurtzite aluminum nitride;Physica Scripta;2024-01-05

4. Polarization anisotropy and valence band ordering in semipolar (112¯2) AlInN/GaN heterostructures;Physical Review B;2023-01-05

5. Optical and nano-mechanical characterization of c-axis oriented AlN film;Optical Materials;2022-07

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