A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1−xN multiple quantum wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=1/a=015802/pdf
Reference22 articles.
1. AlGaN/GaN quantum well ultraviolet light emitting diodes
2. Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells
3. Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
4. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
5. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes
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1. Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes;Advanced Electronic Materials;2024-07-19
2. Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer;IEEE Photonics Journal;2023-06
3. Unexpectedly Simultaneous Increase in Wavelength and Output Power of Yellow LEDs Based on Staggered Quantum Wells by TMIn Flux Modulation;Nanomaterials;2022-09-27
4. High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells;Advanced Optical Materials;2022-06-25
5. Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength;Journal of Materials Research;2021-12-14
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