Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells-Reference-Cited by-同舟云学术

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Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells

Published:2001-12-01 Issue:Part 2, No. 12A Volume:40 Page:L1308-L1310
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Khan Muhammad Asif,Adivarahan Vinod,Zhang Jian Ping,Chen Changqing,Kuokstis Edmundas,Chitnis Ashay,Shatalov Maxim,Yang Jin Wei,Simin Grigory

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes;Advanced Electronic Materials;2024-03-09

2. Impacts of hydrogen flow and growth pressure on characteristics of semipolar (11 2‾ 2) plane AlInGaN quaternary epilayers;Micro and Nanostructures;2022-10

3. Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes;Fundamental Research;2021-11

4. Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies;Materials Research Bulletin;2021-08

5. AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs;Springer Series in Materials Science;2020

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